? semiconductor components industries, llc, 2016 august, 2016 ? rev. 10 1 publication order number: mjh11017/d mjh11017, mjh11019, mjh11021(pnp) mjh11018, mjh11020, mjh11022(npn) complementary darlington silicon power transistors these devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. features ? high dc current gain @ 10 adc ? h fe = 400 min (all types) ? collector?emitter sustaining voltage v ceo(sus) = 150 vdc (min) ? mjh11018, 17 = 200 vdc (min) ? mjh11020, 19 = 250 vdc (min) ? mjh11022, 21 ? low collector?emitter saturation voltage v ce(sat) = 1.2 v (typ) @ i c = 5.0 a = 1.8 v (typ) @ i c = 10 a ? monolithic construction ? these are pb?free devices maximum ratings rating symbol max unit collector?emitter voltage mjh11018, mjh11017 mjh11020, mjh11019 mjh11022, mjh11021 v ceo 150 200 250 vdc collector?base voltage mjh11018, mjh11017 mjh11020, mjh11019 mjh11022, mjh11021 v cb 150 200 250 vdc emitter?base voltage v eb 5.0 vdc collector current ? continuous ? peak (note 1) i c 15 30 adc base current i b 0.5 adc total device dissipation @ t c = 25 c derate above 25 c p d 150 1.2 w w/ c operating and storage junction temperature range t j , t stg ? 65 to + 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 0.83 c/w stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. pulse test: pulse width = 5.0 ms, duty cycle 10%. sot?93 (to?218) case 340d style 1 15 ampere darlington complementary silicon power transistors 150?250 volts, 150 watts www. onsemi.com see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information collector 2 base 1 emitter 3 collector 2 base 1 emitter 3 npn pnp mjh11018 mjh11017 mjh11020 mjh11022 mjh11019 mjh11021 3 2 1 to?247 case 340l style 3 note: effective june 2012 this device wil l be available only in the to?247 package. reference fpcn# 16827.
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) www. onsemi.com 2 marking diagrams aywwg mjh110xx mjh110xx aywwg 1 base 2 collector 3 emitter a = assembly location y = year ww = work week g = pb?free package mjh110xx = device code xx = 17, 19, 21, 18, 20, 22 1 base 2 collector 3 emitter to?247 to?218 ordering information device order number package type shipping mjh11017g to?218 (pb?free) 30 units / rail MJH11018G to?218 (pb?free) 30 units / rail mjh11019g to?218 (pb?free) 30 units / rail mjh11020g to?218 (pb?free) 30 units / rail mjh11021g to?218 (pb?free) 30 units / rail mjh11022g to?218 (pb?free) 30 units / rail mjh11017g to?247 (pb?free) 30 units / rail MJH11018G to?247 (pb?free) 30 units / rail mjh11019g to?247 (pb?free) 30 units / rail mjh11020g to?247 (pb?free) 30 units / rail mjh11021g to?247 (pb?free) 30 units / rail mjh11022g to?247 (pb?free) 30 units / rail
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) www. onsemi.com 3 p d , power dissipation (watts) 160 0 t c , case temperature ( c) 40 60 100 120 160 80 140 20 figure 1. power derating 0 20 40 60 80 100 140 120 ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? collector?emitter sustaining voltage (note 2) (i c = 0.1 adc, i b = 0) mjh11017, mjh11018 mjh11019, mjh11020 mjh11021, mjh11022 ???? ???? ???? ???? ??? ??? ??? ??? ???? ???? ???? ???? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ???? ???? ???? ???? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ??????????????????????? c) ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 2) ??????????????????????? ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ???? ??? ??? ??? ??? ???? ???? ???? ???? ??? ??? ??? ??? ??????????????????????? ??????????????????????? ??????????????????????? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ??? ??? ???? ???? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????????? ??????????????????????? current?gain bandwidth product (i c = 10 adc, v ce = 3.0 vdc, f = 1.0 mhz) ???? ???? ??? ??? ???? ???? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ??? ??? ???? ???? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? switching characteristics ??????????????????????? ??????????????????????? ???? ???? ?????? ?????? ??? ??? ??????????????????????? ??????????????????????? ???? ???? ??? ??? ???? ???? ??? ??? ??????????? ??????????? delay time ????????????? ????????????? ????????????? ????????????? ????????????? ???? ???? ??? ??? ???? ???? ??? ??? ??????????? ??????????? ???? ???? ??? ??? ???? ???? ??? ??? s ??????????? ??????????? ???? ???? ??? ??? ???? ???? ??? ??? s ??????????? ??????????? ???? ???? ??? ??? ???? ???? ??? ??? s 2. pulse test: pulse width = 300 s, duty cycle 2.0%.
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) www. onsemi.com 4 figure 2. switching times test circuit r b & r c varied to obtain desired current levels d 1 , must be fast recovery types, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma t r , t f 10 ns duty cycle = 1.0% for t d and t r , d 1 is disconnected and v2 = 0 for npn test circuit, reverse diode and voltage polarities. v2 approx +12 v 0 v1 approx -8.0 v v cc -100 v tut scope r b +4.0 v d 1 51 r c 25 s figure 3. thermal response t, time (ms) 1.0 0.01 0.02 0.7 0.2 0.1 0.05 0.02 r(t), effective transient thermal 0.05 1.0 2.0 5.0 10 20 50 100 200 500 r jc (t) = r(t) r jc r jc = 0.83 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.1 0.5 0.2 resistance (normalized) 100 0 0.5 0.3 0.07 0.03 0.01 0.03 3.0 30 300 0.3 0.2 0.1 0.05 0.02 0.01 wire bond limit thermal limit second breakdown limit 0.5 ms figure 4. maximum rated forward bias safe operating area (fbsoa) 1.0 ms 5.0 ms 0.1 ms dc v ce , collector-emitter voltage (volts) 2.0 30 2.0 i c , collector current (amps) 3.0 10 10 0.5 0.2 5.0 20 1.0 20 100 0 t c = 25 c single pulse 5.0 50 250 150 30 mjh11017, mjh11018 mjh11019, mjh11020 mjh11021, mjh11022 forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 4 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 3. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) www. onsemi.com 5 v ce , collector-emitter voltage (volts) 20 30 140 i c , collector current (amps) 60 180 100 10 20 260 220 0 figure 5. maximum rated reverse bias safe operating area (rbsoa) l = 200 h i c /i b1 50 t c = 100 c v be(off) = 0-5.0 v r be = 47 duty cycle = 10% 0 mjh11017, mjh11018 mjh11019, mjh11020 mjh11021, mjh11022 reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turn?off, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltage?current conditions during reverse biased turn?off. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 5 gives rbsoa characteristics. t c = 150 c 1000 3000 2000 5000 7000 10,000 pnp npn figure 6. dc current gain 0.2 15 3.0 1.0 0.5 5.0 10 0.3 h fe , dc current gain t c = 150 c 25 c -55 c v ce = 5.0 v i c , collector current (amps) 100 h fe , dc current gain i c , collector current (amps) 500 200 0.7 1000 2000 5000 10,000 0.2 15 3.0 1.0 0.5 5.0 10 0.3 7.0 25 c -55 c v ce = 5.0 v 100 500 200 0.7
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) www. onsemi.com 6 voltage (volts) v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) i b , base current (ma) 1.0 1.0 2.0 5.0 3.0 2.5 4.0 3.5 3.0 10 30 4.5 2.0 50 100 i c = 15 a 20 figure 7. collector saturation region figure 8. ?on? voltages 1.5 300 500 1000 200 t j = 25 c i c = 10 a i c = 5.0 a i c , collector current (amps) 3.0 2.5 voltage (volts) 4.0 3.5 2.0 0.5 0.2 0.5 5.0 0.3 1.0 0.7 3.0 t j = 25 c v be(sat) @ i c /i b = 100 v be @ v ce = 5.0 v v ce(sat) @ i c /i b = 100 7.0 2.0 10 20 i b , base current (ma) 1.0 2.0 5.0 3.0 10 30 50 100 i c = 15 a 20 300 500 200 t j = 25 c i c = 10 a i c = 5.0 a i c , collector current (amps) 1.5 1.0 1000 pnp npn pnp npn 3.0 2.5 4.0 3.5 2.0 0.5 0.2 0.5 5.0 1.0 0.7 t j = 25 c v be(sat) @ i c /i b = 100 v be @ v ce = 5.0 v v ce(sat) @ i c /i b = 100 2.0 10 20 1.5 1.0 1.0 3.0 2.5 4.0 3.5 4.5 2.0 1.5 base emitter collector base emitter collector pnp npn figure 9. darlington schematic mjh11018 mjh11020 mjh11022 mjh11017 mjh11019 mjh11021
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) www. onsemi.com 7 package dimensions sot?93 (to?218) case 340d?02 issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069 to?247 case 340l?02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ?t? ?b? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ?q? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 3: pin 1. base 2. collector 3. emitter 4. collector
mjh11017, mjh11019, mjh11021 (pnp) mjh11018, mjh11020, mjh11022 (npn) www. onsemi.com 8 p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mjh11017/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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